a. a. abd. rahni, n. zainal, m. f. zainal adna, n. e. othman, m. f. bukhori.  (2015).  development of the online student attendance monitoring system (sams tm) based on qr-codes and mobile devices.  - journal of engineering science and technology.  28-40. 

veeraiyah thangasamy, noor ain kamsani, mohd nizar hamidon, shaiful jahari hashim, zubaida yusoff, muhammad faiz bukhori.  (2015).  low power 18t pass transistor logic ripple carry adder.  - ieice electronics express.  1-12. 

h. hussin, n. soin, m. f. bukhori, s. wan muhamad hatta, y. abdul wahab.  (2014).  effects of gate stack structural and process defectivity on high-k dielectric dependence of nbti reliability in 32 nm technology node pmosfets.  - the scientific world journal.  1-13. 

veeraiyah thangasamy, noor ain kamsani, mohd nizar hamidon, nasri sulaiman, muhammad faiz bukhori.  (2014).  q and frequency tunable second order lc bandpass filter for long term evolution (lte) receiver.  - mitteilungen klosterneuburg.  234-245. 

veeraiyah thangasamy, noor ain kamsani, mohd nizar hamidon, muhammad faiz bukhori.  (2014).  an overview of rf power amplifier techniques and effect of transistor scaling on its design parameters.  - international journal of applied engineering research.  257-276. 

h. hussin, n. soin, m. f. bukhori, y. abdul wahab, s. shahabuddin.  (2014).  new simulation method to characterize the recoverable component of dynamic negative bias temperature instability in p channel metal oxide semiconductor field effect transistors.  - journal of electronics materials.  1207-1213. 

muhammad faiz bukhori, noor ain kamsani, asen asenov, nazrul anuar nayan.  (2012).  accurate capturing of the statistical aspect of nbti/pbti variability into statistical compact models.  - microelectronics journal.  43(11):793-801. 

jacopo franco, ben kaczer, maria toledano luque, muhammad faiz bukhori, philippe j. roussel, tibor grasser, asen asenov, guido groeseneken.  (2012).  impact of individual charged gate-oxide defects on the entire id-vg characteristic of nanoscaled fets.  - ieee electron device letters.  33(6):779-781. 

muhammad faiz bukhori, scott roy, asen asenov.  (2010).  simulation of statistical aspects of charge trapping and related degradation in bulk mosfets in the presence of random discrete dopants.  - ieee transactions on electron devices.  57(4):795-803.