Penerbitan Berimpak Tinggi

j. yang, a r mohmad, y. wang, r. fullon, x. song, f. zhao, i. bozkurt, m. augustin, e. santos, h. shin, w. zhang, d. voiry, h. y. jeong, m. chhowalla.  (2019).  ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution.  - nature materials.  1309-1314. 

noor azwen noor azmy, ahmad ashrif a bakar, norhana arsad, sarada idris, abdul rahman mohmad, aidil abdul hamid.  (2017).  enhancement of zno-rgo nanocomposite thin films by gamma radiation for e. coli sensor.  - applied surface science.  1134-1143. 

m. alizadeh, v. ganesh, b.t. goh, c.f. dee, a.r. mohmad, s.a. rahman.  (2016).  effect of nitrogen flow rate on structural, morphological and optical properties of in-rich inxal1-xn thin films grown by plasma-assisted dual source reactive evaporation.  - applied surface science.  150-156. 

ar mohmad, f bastiman, cj hunter, f harun, df reyes, dl sales, d gonzales, rd richards, jpr david, by majlis.  (2015).  bismuth concentration inhomogeneity in gaasbi bulk and quantum well structures.  - semiconductor science and technology.  1-6. 

robert d.richards, faebian bastiman, christopher j. hunter, danuta f. mendes, abdul r. mohmad, john s. roberts, john p. r. david.  (2014).  molecular beam epitaxy growth of gaasbi using as2 and as4.  - journal of crystal growth.  120-124. 

f. bastiman, a.r. mohmad, j.s. ng, j.p.r david, s.j. sweeney.  (2012).  non-stoichiometric gaasbi/gaas (100) molecular beam epitaxy growth.  - journal of crystal growth.  338(1):57-61. 

mohmad, a. r.; bastiman, f.; hunter, c. j.; richards, r.; sweeney, s. j.; ng, j. s.; david, j. p. r..  (2012).  effects of rapid thermal annealing on gaas1-xbix alloys.  - applied physics letters.  101(1):Art no 012106. 

mohmad, ar; bastiman, f; hunter, cj; ng, js; sweeney, sj; david, jpr.  (2011).  the effect of bi composition to the optical quality of gaas(1-x)bi(x).  - applied physics letters.  99(4):Art no 042107. 

mohmad, a.r., bastiman, f., ng, j.s., sweeney, s.j., david, j.p.r..  (2011).  photoluminescence investigation of high quality gaas1-x bi x on gaas.  - applied physics letters.  98(12):122107.