dr. abdul rahman bin mohmad

pensyarah universiti

institut kejuruteraan mikro & nanoelektronik (imen)

 armohmad@ukm.edu.my

No. sambungan :  0389118558

No. rasmi:
UKM : 03 8921 5555



   Biografi/ Biography :

  • Dr. Abdul Rahman Mohmad is a research fellow at the Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia. He is also a Senior Member of the Institute of Electrical and Electronics Engineers. He completed his MEng in Microelectronics from the University of Sheffield UK in 2008 and was awarded the Hector Aitken Wainwright Prize for his academic excellence. In 2009, he returned to the University of Sheffield to pursue his PhD and involved in the molecular beam epitaxy (MBE) growth and characterizations of III-V semiconductors. In 2016, he joined Prof. Chhowalla’s group in Rutgers University USA as a postdoctoral researcher for two years. His current research focuses on chemical vapor deposition (CVD) of layered transition metal dichalcogenides for energy applications. He recently published a paper in Nature Materials (IF 38.9) as the first author. Outside working hours, he dedicates most of his time to his family and humanitarian causes.

  • muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, yutaka wakayama, abdul rahman mohmad.  (2021).  effects of post-annealing on mos2 thin films synthesized by multi-step chemical vapor deposition.  - nanomaterials and nanotechnology.  1-7. 

     

    muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, abdul rahman mohmad.  (2021).  inhomogenous deposition of vertical mos2 grown by chemical vapor deposition.  - 2021 ieee regional symposium on micro and nanoelectronics (rsm).  24-26. 

     

    abdul rahman bin mohmad;azrul azlan bin hamzah;tengku hasnan bin tengku abdul aziz;akrajas bin ali umar.  (2021).  metallic 2-dimensional 1t mos2 as electrode material for supercapacitors.  -

     

    abdul rahman mohmad, azrul azlan hamzah, jieun yang, yan wang, ibrahim bozkurt, hyeon suk shin, hu young jeong, manish chhowalla.  (2021).  synthesis of metallic mixed 3r and 2h nb1+xs2 nanoflakes by chemical vapor deposition.  - faraday discussions.  332-340. 

     

    muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, siti nur farhana mohd nasir, mohd asri mat teridi, abdul rahman mohmad.  (2020).  chemical vapor deposition of vertically standing mos2 nanoflakes for hydrogen evolution.  - 1. 

     

    abdul rahman mohmad, azrul azlan hamzah, jieun yang, yan wang, ibrahim bozkurt, hyeon suk shin, hu young jeong, manish chhowalla.  (2021).  synthesis of metallic mixed 3r and 2h nb1+xs2 nanoflakes by chemical vapor deposition.  - faraday discussions.  332-340. 

     

    muhammad safwan zaini, josephine ying chyi liew, shahrul ainliah alang ahmad, abdul rahman mohmad, mazliana ahmad kamarudin.  (2020).  photoluminescence investigation of carrier localization in colloidal pbs and pbs/mns quantum dots.  - acs omega.  30956-30962. 

     

    muhammad safwan zaini, josephine ying chyi liew, shahrul ainliah alang ahmad, abdul rahman mohmad, mazliana ahmad kamarudin.  (2020).  quantum confinement effect and photoenhancement of photoluminescence of pbs and pbs/mns quantum dots.  - applied sciences.  1-10. 

     

    muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, siti nur farhana mohd nasir, mohd asri mat teridi and abdul rahman mohmad.  (2020).  effects of mo vapor concentration on the morphology of vertically standing mos2 nanoflakes.  - nanotechnology.  1-7. 

     

    j. yang, a r mohmad, y. wang, r. fullon, x. song, f. zhao, i. bozkurt, m. augustin, e. santos, h. shin, w. zhang, d. voiry, h. y. jeong, m. chhowalla.  (2019).  ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution.  - nature materials.  1309-1314. 

     

    muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, yutaka wakayama, abdul rahman mohmad.  (2021).  effects of post-annealing on mos2 thin films synthesized by multi-step chemical vapor deposition.  - nanomaterials and nanotechnology.  1-7. 

     

    l. hasanah, c. julian, b. mulyanti, a. aransa, r. sumatri, m.h. johari, j.p.r. david, a. r. mohmad.  (2020).  photoluminescence and raman scattering of gaasbi alloy.  - sains malaysiana.  2559-2564. 

     

    muhammad safwan zaini, mazliana ahmad kamarudin, josephine liew ying chyi, shahrul ainliah alang ahmad, abdul rahman mohmad.  (2019).  temperature and power dependence of photoluminescence in pbs quantum dots nanoparticles.  - sains malaysiana.  1281-1288. 

     

    robert douglas richards, christopher jack hunter, faebian bastiman, abdul rahman mohmad, john paul r. david.  (2016).  telecommunication wavelength gaasbi light emitting diodes.  - iet optoelectronics.  34-38. 

     

    a. r. mohmad, f. bastiman, c. j. hunter, r. d. richards, s. j. sweeney, j. s. ng, j. p. r. david, b. y. majlis.  (2014).  localization effects and band gap of gaasbi alloys.  - physica status solidi b.  1276-1281. 

     

    muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, abdul rahman mohmad.  (2021).  inhomogenous deposition of vertical mos2 grown by chemical vapor deposition.  - 2021 ieee regional symposium on micro and nanoelectronics (rsm).  24-26. 

     

    lilik hasanah, cahya julian, budi mulyanti, ananda aransa, roni sumatri, muhammad hilmi johari, john david, abdul rahman mohmad.  (2020).  photoluminescence and raman studies on gaas1-xbix grown on gaas.  - 2020 ieee 8th international conference on photonics (icp).  1-2. 

     

    khairul anuar mohamad, mohammad syahmi nordin, nafarizal nayan, afishah alias, abdul rahman mohmad, adrian boland-thoms, anthony john vickers.  (2019).  characterization of iii-v dilute nitride based multi quantum well pin diodes for next generation optoelectrical conversion devices.  - materials today proceedings.  625-631. 

     

    abdul rahman mohmad & john p r david.  (2018).  band gap engineering of gaasbi alloy for emission of up to 1.52um.  - ieee international conference on semiconductor electronics 2018. 

     

    a. r. mohmad, b. y. majlis, f. bastiman, r. d. richards & j. p. r. david.  (2015).  the effect of growth conditions to the optical quality of gaasbi alloy.  - ieee regional symposium on micro and nanoelectronics 2015. 

     

    muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, abdul rahman mohmad.  (2021).  inhomogenous deposition of vertical mos2 grown by chemical vapor deposition.  - 2021 ieee regional symposium on micro and nanoelectronics (rsm).  24-26. 

     

    lilik hasanah, cahya julian, budi mulyanti, ananda aransa, roni sumatri, muhammad hilmi johari, john david, abdul rahman mohmad.  (2020).  photoluminescence and raman studies on gaas1-xbix grown on gaas.  - 2020 ieee 8th international conference on photonics (icp).  1-2. 

     

    khairul anuar mohamad, mohammad syahmi nordin, nafarizal nayan, afishah alias, abdul rahman mohmad, adrian boland-thoms, anthony john vickers.  (2019).  characterization of iii-v dilute nitride based multi quantum well pin diodes for next generation optoelectrical conversion devices.  - materials today proceedings.  625-631. 

     

    abdul rahman mohmad & john p r david.  (2018).  band gap engineering of gaasbi alloy for emission of up to 1.52um.  - ieee international conference on semiconductor electronics 2018. 

     

    a. r. mohmad, b. y. majlis, f. bastiman, r. d. richards & j. p. r. david.  (2015).  the effect of growth conditions to the optical quality of gaasbi alloy.  - ieee regional symposium on micro and nanoelectronics 2015. 

     

    abdul rahman mohmad.  (2018).  teknologi semikonduktor dan nanoelektronik : perkembangan dan kegunaan.  - 17. 

     

    abdul rahman mohmad.  (2018).  teknologi semikonduktor dan nanoelektronik : perkembangan dan kegunaan.  - 17. 

     

    abdul rahman bin mohmad;azrul azlan bin hamzah;tengku hasnan bin tengku abdul aziz;akrajas bin ali umar.  (2021).  metallic 2-dimensional 1t mos2 as electrode material for supercapacitors.  -

     

    muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, siti nur farhana mohd nasir, mohd asri mat teridi, abdul rahman mohmad.  (2020).  chemical vapor deposition of vertically standing mos2 nanoflakes for hydrogen evolution.  - 1. 

     

    abdul rahman mohmad.  (2020).  bernama radio: the skillz.  - penyelidik bertaraf global. 

     

    norhayati binti abu bakar;akrajas bin ali umar;abdul rahman bin mohmad;norhayati binti abu bakar.  (2019).  building surface enhanced raman spectroscopy (sers) based biosensors.  -

     

    muhammad hilmi johari, mohd ambri mohamed & abdul rahman mohmad.  (2019).  effects of growth temperature on mos2 grown by chemical vapor deposition.  -