pensyarah universiti
institut kejuruteraan mikro & nanoelektronik (imen)
No. Telefon Rasmi : 0389118558
No. rasmi:
UKM : 03 8921 5555
Biografi/ Biography :
Dr. Abdul Rahman Mohmad is a research fellow at the Institute of Microengineering and
Nanoelectronics, Universiti Kebangsaan Malaysia. He is also a Senior Member of the
Institute of Electrical and Electronics Engineers. He completed his MEng in Microelectronics
from the University of Sheffield UK in 2008 and was awarded the Hector Aitken Wainwright
Prize for his academic excellence. In 2009, he returned to the University of Sheffield to
pursue his PhD and involved in the molecular beam epitaxy (MBE) growth and
characterizations of III-V semiconductors. In 2016, he joined Prof. Chhowalla’s group in
Rutgers University USA as a postdoctoral researcher for two years. His current research
focuses on chemical vapor deposition (CVD) of layered transition metal dichalcogenides for
energy applications. He recently published a paper in Nature Materials (IF 38.9) as the first
author. Outside working hours, he dedicates most of his time to his family and humanitarian
causes.
z. batool, k. hild, i. marko, a. r. mohmad, j. p. r. david, x. lu, t. tiedje, s. j. sweeney. (2023). effect of bismuth incorporation on recombination mechanisms in gaasbi/gaas heterostructures. - journal of materials science: materials in electronics. 1-8.
abdul rahman mohmad, zhihao xu, yudai yamashita, takashi suemasu. (2022). assessing defect-assisted emissions in indirect bandgap basi2 by photoluminescence. - journal of luminescence. 1-6.
mohamad shukri sirat, muhammad hilmi johari, abdul rahman mohmad, muhammad aniq shazni mohammad haniff, mohd hanafi ani, mohd rofei mat hussin, mohd ambri mohamed. (2022). direct growth and properties of few-layer mos2 on multilayer graphene prepared by chemical vapor deposition. - journal of materials science. 19704-19715.
mohd ambri bin mohamed;abdul rahman bin mohmad;p. susthitha menon a/p n v visvanathan;pankaj kumar choudhury;muhamad ramdzan bin buyong;ooi poh choon. (2022). epitaxial growth of next generation alpha gallium oxide-based power devices using mist-cvd technique. - . .
robert d. richards, nicholas j. bailey, yuchen liu, thomas b. o. rockett, abdul rahman mohmad. (2022). gaasbi: from molecular beam epitaxy growth to devices. - physica status solidi b: basic solid state physics. 1-14.
z. batool, k. hild, i. marko, a. r. mohmad, j. p. r. david, x. lu, t. tiedje, s. j. sweeney. (2023). effect of bismuth incorporation on recombination mechanisms in gaasbi/gaas heterostructures. - journal of materials science: materials in electronics. 1-8.
mohamad shukri sirat, muhammad hilmi johari, abdul rahman mohmad, muhammad aniq shazni mohammad haniff, mohd hanafi ani, mohd rofei mat hussin, mohd ambri mohamed. (2022). direct growth and properties of few-layer mos2 on multilayer graphene prepared by chemical vapor deposition. - journal of materials science. 19704-19715.
abdul rahman mohmad, zhihao xu, yudai yamashita, takashi suemasu. (2022). assessing defect-assisted emissions in indirect bandgap basi2 by photoluminescence. - journal of luminescence. 1-6.
abdul rahman mohmad, azrul azlan hamzah, jieun yang, yan wang, ibrahim bozkurt, hyeon suk shin, hu young jeong, manish chhowalla. (2021). synthesis of metallic mixed 3r and 2h nb1+xs2 nanoflakes by chemical vapor deposition. - faraday discussions. 332-340.
muhammad safwan zaini, josephine ying chyi liew, shahrul ainliah alang ahmad, abdul rahman mohmad, mazliana ahmad kamarudin. (2020). photoluminescence investigation of carrier localization in colloidal pbs and pbs/mns quantum dots. - acs omega. 30956-30962.
mohamad shukri sirat, muhammad hilmi johari, abdul rahman mohmad, muhammad aniq shazni mohammad haniff, mohd hanafi ani, mohd ismahadi syono, mohd ambri mohamed. (2022). uniform growth of mos2 films using ultra-low moo3 precursor in one-step heating chemical vapor deposition. - thin solid films. 1-8.
robert d. richards, nicholas j. bailey, yuchen liu, thomas b. o. rockett, abdul rahman mohmad. (2022). gaasbi: from molecular beam epitaxy growth to devices. - physica status solidi b: basic solid state physics. 1-14.
muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, yutaka wakayama, abdul rahman mohmad. (2021). effects of post-annealing on mos2 thin films synthesized by multi-step chemical vapor deposition. - nanomaterials and nanotechnology. 1-7.
l. hasanah, c. julian, b. mulyanti, a. aransa, r. sumatri, m.h. johari, j.p.r. david, a. r. mohmad. (2020). photoluminescence and raman scattering of gaasbi alloy. - sains malaysiana. 2559-2564.
muhammad safwan zaini, mazliana ahmad kamarudin, josephine liew ying chyi, shahrul ainliah alang ahmad, abdul rahman mohmad. (2019). temperature and power dependence of photoluminescence in pbs quantum dots nanoparticles. - sains malaysiana. 1281-1288.
z. batool, k. hild, i. marko, a. r. mohmad, j. p. r. david, x. lu, t. tiedje, s. j. sweeney. (2023). effect of bismuth incorporation on recombination mechanisms in gaasbi/gaas heterostructures. - journal of materials science: materials in electronics. 1-8.
abdul rahman mohmad, zhihao xu, yudai yamashita, takashi suemasu. (2022). assessing defect-assisted emissions in indirect bandgap basi2 by photoluminescence. - journal of luminescence. 1-6.
mohamad shukri sirat, muhammad hilmi johari, abdul rahman mohmad, muhammad aniq shazni mohammad haniff, mohd hanafi ani, mohd ismahadi syono, mohd ambri mohamed. (2022). uniform growth of mos2 films using ultra-low moo3 precursor in one-step heating chemical vapor deposition. - thin solid films. 1-8.
robert d. richards, nicholas j. bailey, yuchen liu, thomas b. o. rockett, abdul rahman mohmad. (2022). gaasbi: from molecular beam epitaxy growth to devices. - physica status solidi b: basic solid state physics. 1-14.
mohamad shukri sirat, muhammad hilmi johari, abdul rahman mohmad, muhammad aniq shazni mohammad haniff, mohd hanafi ani, mohd rofei mat hussin, mohd ambri mohamed. (2022). direct growth and properties of few-layer mos2 on multilayer graphene prepared by chemical vapor deposition. - journal of materials science. 19704-19715.
a. r. mohmad, z. xu, y. yamashita, t. suemasu. (2022). investigating defect-assisted emission in basi2 by power dependent photoluminescence. - 2022 ieee international conference on semiconductor electronics (icse). 133-135.
muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, abdul rahman mohmad. (2021). inhomogenous deposition of vertical mos2 grown by chemical vapor deposition. - 2021 ieee regional symposium on micro and nanoelectronics (rsm). 24-26.
lilik hasanah, cahya julian, budi mulyanti, ananda aransa, roni sumatri, muhammad hilmi johari, john david, abdul rahman mohmad. (2020). photoluminescence and raman studies on gaas1-xbix grown on gaas. - 2020 ieee 8th international conference on photonics (icp). 1-2.
khairul anuar mohamad, mohammad syahmi nordin, nafarizal nayan, afishah alias, abdul rahman mohmad, adrian boland-thoms, anthony john vickers. (2019). characterization of iii-v dilute nitride based multi quantum well pin diodes for next generation optoelectrical conversion devices. - materials today proceedings. 625-631.
abdul rahman mohmad & john p r david. (2018). band gap engineering of gaasbi alloy for emission of up to 1.52um. - ieee international conference on semiconductor electronics 2018. .
abdul rahman mohmad. (2018). teknologi semikonduktor dan nanoelektronik : perkembangan dan kegunaan. - . 17.
abdul rahman mohmad. (2018). teknologi semikonduktor dan nanoelektronik : perkembangan dan kegunaan. - . 17.
robert d. richards, nicholas j. bailey, yuchen liu, thomas b. o. rockett, abdul rahman mohmad. (2022). cover page physica status solidi b volume 259 issue 2. - . 1.
mohd ambri bin mohamed;abdul rahman bin mohmad;p. susthitha menon a/p n v visvanathan;pankaj kumar choudhury;muhamad ramdzan bin buyong;ooi poh choon. (2022). epitaxial growth of next generation alpha gallium oxide-based power devices using mist-cvd technique. - . .
dilla duryha binti berhanuddin;burhanuddin bin yeop majlis;akrajas bin ali umar;abdul rahman bin mohmad;rozan binti mohamad yunus. (2022). high intensity photoluminescence from structural manipulation of hybrid 2d materials and silicon structure for the development of light-emitting device at telecommunication wavelength . - . .
akrajas bin ali umar;abdul rahman bin mohmad;mohd yusri bin abd rahman. (2022). ultimate thin tio2-tis2 hybrid nanosheet for high performance perovskite solar cells. - . .
abdul rahman bin mohmad;azrul azlan bin hamzah;tengku hasnan bin tengku abdul aziz;akrajas bin ali umar. (2021). metallic 2-dimensional 1t mos2 as electrode material for supercapacitors. - . .
| Geran / Grant | Kolaborator / Collaborator | Status |
|---|---|---|
| LOW DEFECTS AND LARGE GRAIN SIZE DIRECT BANDGAP 2-DIMENSIONAL RHENIUM DISULFIDE (RES2) FOR HIGH RESPONSIVITY AND FAST RESPONSE TIME NEAR-INFRARED PHOTODETECTOR | mimos berhad | 79.4% (2021-09-01 sehingga 2023-08-30) |