dr. abdul rahman bin mohmad

pensyarah universiti

institut kejuruteraan mikro & nanoelektronik (imen)

 armohmad@ukm.edu.my

No. sambungan :  8560

No. rasmi:
UKM : 03 8921 5555
HUKM : 03-9145 6074/6075/6931/7748



   Biografi :
  • pensyarah universiti

  • abdul rahman mohmad, muhammad hilmi johari, jieun yang, yan wang, manish chhowalla.  (2019).  chemical vapor deposition of transition metal dichalcogenides for hydrogen evolution reaction.  - the 4th malaysia-japan joint symposium on nanoelectronics 2019.  2. 

     

    abdul rahman mohmad, j yang, y wang, h s shin, h. y. jeong, m chhowalla.  (2019).  chemical vapor deposition of transition metal dichalcogenides for hydrogen evolution reaction.  - 3rd southeast asia collaborative symposium on energy materials malaysia 2019.  4. 

     

    muhammad hilmi johari, mohd ambri mohamed & abdul rahman mohmad.  (2019).  effects of growth temperature on mos2 grown by chemical vapor deposition.  -

     

    khairul anuar mohamad, mohammad syahmi nordin, nafarizal nayan, afishah alias, abdul rahman mohmad, adrian boland-thoms, anthony john vickers.  (2019).  characterization of iii-v dilute nitride based multi quantum well pin diodes for next generation optoelectrical conversion devices.  - materials today proceedings.  625-631. 

     

    abdul rahman mohmad, j. yang, y. wang, h. s. shin, h. y. jeong, m. chhowalla.  (2019).  chemical vapor deposition of mixed phase nbs2 catalyst for hydrogen evolution reaction.  - symposium on fuel cell and hydrogen technology 2019.  19. 

     

    noor azwen noor azmy, ahmad ashrif a bakar, norhana arsad, sarada idris, abdul rahman mohmad, aidil abdul hamid.  (2017).  enhancement of zno-rgo nanocomposite thin films by gamma radiation for e. coli sensor.  - applied surface science.  1134-1143. 

     

    m. alizadeh, v. ganesh, b.t. goh, c.f. dee, a.r. mohmad, s.a. rahman.  (2016).  effect of nitrogen flow rate on structural, morphological and optical properties of in-rich inxal1-xn thin films grown by plasma-assisted dual source reactive evaporation.  - applied surface science.  150-156. 

     

    ar mohmad, f bastiman, cj hunter, f harun, df reyes, dl sales, d gonzales, rd richards, jpr david, by majlis.  (2015).  bismuth concentration inhomogeneity in gaasbi bulk and quantum well structures.  - semiconductor science and technology.  1-6. 

     

    robert d.richards, faebian bastiman, christopher j. hunter, danuta f. mendes, abdul r. mohmad, john s. roberts, john p. r. david.  (2014).  molecular beam epitaxy growth of gaasbi using as2 and as4.  - journal of crystal growth.  120-124. 

     

    f. bastiman, a.r. mohmad, j.s. ng, j.p.r david, s.j. sweeney.  (2012).  non-stoichiometric gaasbi/gaas (100) molecular beam epitaxy growth.  - journal of crystal growth.  338(1):57-61. 

     

    muhammad safwan zaini, mazliana ahmad kamarudin, josephine liew ying chyi, shahrul ainliah alang ahmad, abdul rahman mohmad.  (2019).  temperature and power dependence of photoluminescence in pbs quantum dots nanoparticles.  - sains malaysiana.  1281-1288. 

     

    robert douglas richards, christopher jack hunter, faebian bastiman, abdul rahman mohmad, john paul r. david.  (2016).  telecommunication wavelength gaasbi light emitting diodes.  - iet optoelectronics.  34-38. 

     

    a. r. mohmad, f. bastiman, c. j. hunter, r. d. richards, s. j. sweeney, j. s. ng, j. p. r. david, b. y. majlis.  (2014).  localization effects and band gap of gaasbi alloys.  - physica status solidi b.  1276-1281. 

     

    khairul anuar mohamad, mohammad syahmi nordin, nafarizal nayan, afishah alias, abdul rahman mohmad, adrian boland-thoms, anthony john vickers.  (2019).  characterization of iii-v dilute nitride based multi quantum well pin diodes for next generation optoelectrical conversion devices.  - materials today proceedings.  625-631. 

     

    abdul rahman mohmad & john p r david.  (2018).  band gap engineering of gaasbi alloy for emission of up to 1.52um.  - ieee international conference on semiconductor electronics 2018. 

     

    a. r. mohmad, b. y. majlis, f. bastiman, r. d. richards & j. p. r. david.  (2015).  the effect of growth conditions to the optical quality of gaasbi alloy.  - ieee regional symposium on micro and nanoelectronics 2015. 

     

    ar mohamad. by majlis, f bastiman, cj hunter, rd richards, js ng, jpr david.  (2014).  photoluminescence from localized states in gaasbi epilayers.  - ieee international conference on semiconductor electronics, proceedings, icse.  354. 

     

    robert d richards, faebian bastiman, abdul r mohmad, christopher j hunter, john p r david, nicholas j ekins-daukes.  (2013).  gaasbi mqws for multi-junction photovoltaics.  - 39th ieee photovoltaic specialist conference. 

     

    khairul anuar mohamad, mohammad syahmi nordin, nafarizal nayan, afishah alias, abdul rahman mohmad, adrian boland-thoms, anthony john vickers.  (2019).  characterization of iii-v dilute nitride based multi quantum well pin diodes for next generation optoelectrical conversion devices.  - materials today proceedings.  625-631. 

     

    abdul rahman mohmad & john p r david.  (2018).  band gap engineering of gaasbi alloy for emission of up to 1.52um.  - ieee international conference on semiconductor electronics 2018. 

     

    a. r. mohmad, b. y. majlis, f. bastiman, r. d. richards & j. p. r. david.  (2015).  the effect of growth conditions to the optical quality of gaasbi alloy.  - ieee regional symposium on micro and nanoelectronics 2015. 

     

    ar mohamad. by majlis, f bastiman, cj hunter, rd richards, js ng, jpr david.  (2014).  photoluminescence from localized states in gaasbi epilayers.  - ieee international conference on semiconductor electronics, proceedings, icse.  354. 

     

    robert d richards, faebian bastiman, abdul r mohmad, christopher j hunter, john p r david, nicholas j ekins-daukes.  (2013).  gaasbi mqws for multi-junction photovoltaics.  - 39th ieee photovoltaic specialist conference. 

     

    abdul rahman mohmad.  (2018).  teknologi semikonduktor dan nanoelektronik : perkembangan dan kegunaan.  - 17. 

     

    abdul rahman mohmad.  (2018).  teknologi semikonduktor dan nanoelektronik : perkembangan dan kegunaan.  - 17. 

     

    abdul rahman mohmad, muhammad hilmi johari, jieun yang, yan wang, manish chhowalla.  (2019).  chemical vapor deposition of transition metal dichalcogenides for hydrogen evolution reaction.  - the 4th malaysia-japan joint symposium on nanoelectronics 2019.  2. 

     

    muhammad hilmi johari, mohd ambri mohamed & abdul rahman mohmad.  (2019).  effects of growth temperature on mos2 grown by chemical vapor deposition.  -

     

    abdul rahman mohmad, j yang, y wang, h s shin, h. y. jeong, m chhowalla.  (2019).  chemical vapor deposition of transition metal dichalcogenides for hydrogen evolution reaction.  - 3rd southeast asia collaborative symposium on energy materials malaysia 2019.  4. 

     

    abdul rahman mohmad, j. yang, y. wang, h. s. shin, h. y. jeong, m. chhowalla.  (2019).  chemical vapor deposition of mixed phase nbs2 catalyst for hydrogen evolution reaction.  - symposium on fuel cell and hydrogen technology 2019.  19. 

     

    norhayati binti abu bakar;akrajas bin ali umar;abdul rahman bin mohmad;norhayati binti abu bakar.  (2019).  building surface enhanced raman spectroscopy (sers) based biosensors.  -