dr. abdul rahman bin mohmad

pensyarah universiti

institut kejuruteraan mikro & nanoelektronik (imen)

No. sambungan :  0389118558

No. rasmi:
UKM : 03 8921 5555



   Biografi :
  • Dr. Abdul Rahman Mohmad is a research fellow at the Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia. He is also a Senior Member of the Institute of Electrical and Electronics Engineers. He completed his MEng in Microelectronics from the University of Sheffield UK in 2008 and was awarded the Hector Aitken Wainwright Prize for his academic excellence. In 2009, he returned to the University of Sheffield to pursue his PhD and involved in the molecular beam epitaxy (MBE) growth and characterizations of III-V semiconductors. In 2016, he joined Prof. Chhowalla’s group in Rutgers University USA as a postdoctoral researcher for two years. His current research focuses on chemical vapor deposition (CVD) of layered transition metal dichalcogenides for energy applications. He recently published a paper in Nature Materials (IF 38.9) as the first author. Outside working hours, he dedicates most of his time to his family and humanitarian causes.

  • abdul rahman mohmad.  (2020).  bernama radio: the skillz.  - penyelidik bertaraf global. 

     

    muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, siti nur farhana mohd nasir, mohd asri mat teridi and abdul rahman mohmad.  (2020).  effects of mo vapor concentration on the morphology of vertically standing mos2 nanoflakes.  - nanotechnology.  1-7. 

     

    j. yang, a r mohmad, y. wang, r. fullon, x. song, f. zhao, i. bozkurt, m. augustin, e. santos, h. shin, w. zhang, d. voiry, h. y. jeong, m. chhowalla.  (2019).  ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution.  - nature materials.  1309-1314. 

     

    abdul rahman mohmad, j yang, y wang, h s shin, h. y. jeong, m chhowalla.  (2019).  chemical vapor deposition of transition metal dichalcogenides for hydrogen evolution reaction.  - 3rd southeast asia collaborative symposium on energy materials malaysia 2019.  4. 

     

    khairul anuar mohamad, mohammad syahmi nordin, nafarizal nayan, afishah alias, abdul rahman mohmad, adrian boland-thoms, anthony john vickers.  (2019).  characterization of iii-v dilute nitride based multi quantum well pin diodes for next generation optoelectrical conversion devices.  - materials today proceedings.  625-631. 

     

    muhammad hilmi johari, mohamad shukri sirat, mohd ambri mohamed, siti nur farhana mohd nasir, mohd asri mat teridi and abdul rahman mohmad.  (2020).  effects of mo vapor concentration on the morphology of vertically standing mos2 nanoflakes.  - nanotechnology.  1-7. 

     

    j. yang, a r mohmad, y. wang, r. fullon, x. song, f. zhao, i. bozkurt, m. augustin, e. santos, h. shin, w. zhang, d. voiry, h. y. jeong, m. chhowalla.  (2019).  ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution.  - nature materials.  1309-1314. 

     

    noor azwen noor azmy, ahmad ashrif a bakar, norhana arsad, sarada idris, abdul rahman mohmad, aidil abdul hamid.  (2017).  enhancement of zno-rgo nanocomposite thin films by gamma radiation for e. coli sensor.  - applied surface science.  1134-1143. 

     

    m. alizadeh, v. ganesh, b.t. goh, c.f. dee, a.r. mohmad, s.a. rahman.  (2016).  effect of nitrogen flow rate on structural, morphological and optical properties of in-rich inxal1-xn thin films grown by plasma-assisted dual source reactive evaporation.  - applied surface science.  150-156. 

     

    ar mohmad, f bastiman, cj hunter, f harun, df reyes, dl sales, d gonzales, rd richards, jpr david, by majlis.  (2015).  bismuth concentration inhomogeneity in gaasbi bulk and quantum well structures.  - semiconductor science and technology.  1-6. 

     

    muhammad safwan zaini, mazliana ahmad kamarudin, josephine liew ying chyi, shahrul ainliah alang ahmad, abdul rahman mohmad.  (2019).  temperature and power dependence of photoluminescence in pbs quantum dots nanoparticles.  - sains malaysiana.  1281-1288. 

     

    robert douglas richards, christopher jack hunter, faebian bastiman, abdul rahman mohmad, john paul r. david.  (2016).  telecommunication wavelength gaasbi light emitting diodes.  - iet optoelectronics.  34-38. 

     

    a. r. mohmad, f. bastiman, c. j. hunter, r. d. richards, s. j. sweeney, j. s. ng, j. p. r. david, b. y. majlis.  (2014).  localization effects and band gap of gaasbi alloys.  - physica status solidi b.  1276-1281. 

     

    khairul anuar mohamad, mohammad syahmi nordin, nafarizal nayan, afishah alias, abdul rahman mohmad, adrian boland-thoms, anthony john vickers.  (2019).  characterization of iii-v dilute nitride based multi quantum well pin diodes for next generation optoelectrical conversion devices.  - materials today proceedings.  625-631. 

     

    abdul rahman mohmad & john p r david.  (2018).  band gap engineering of gaasbi alloy for emission of up to 1.52um.  - ieee international conference on semiconductor electronics 2018. 

     

    a. r. mohmad, b. y. majlis, f. bastiman, r. d. richards & j. p. r. david.  (2015).  the effect of growth conditions to the optical quality of gaasbi alloy.  - ieee regional symposium on micro and nanoelectronics 2015. 

     

    ar mohamad. by majlis, f bastiman, cj hunter, rd richards, js ng, jpr david.  (2014).  photoluminescence from localized states in gaasbi epilayers.  - ieee international conference on semiconductor electronics, proceedings, icse.  354. 

     

    robert d richards, faebian bastiman, abdul r mohmad, christopher j hunter, john p r david, nicholas j ekins-daukes.  (2013).  gaasbi mqws for multi-junction photovoltaics.  - 39th ieee photovoltaic specialist conference. 

     

    khairul anuar mohamad, mohammad syahmi nordin, nafarizal nayan, afishah alias, abdul rahman mohmad, adrian boland-thoms, anthony john vickers.  (2019).  characterization of iii-v dilute nitride based multi quantum well pin diodes for next generation optoelectrical conversion devices.  - materials today proceedings.  625-631. 

     

    abdul rahman mohmad & john p r david.  (2018).  band gap engineering of gaasbi alloy for emission of up to 1.52um.  - ieee international conference on semiconductor electronics 2018. 

     

    a. r. mohmad, b. y. majlis, f. bastiman, r. d. richards & j. p. r. david.  (2015).  the effect of growth conditions to the optical quality of gaasbi alloy.  - ieee regional symposium on micro and nanoelectronics 2015. 

     

    ar mohamad. by majlis, f bastiman, cj hunter, rd richards, js ng, jpr david.  (2014).  photoluminescence from localized states in gaasbi epilayers.  - ieee international conference on semiconductor electronics, proceedings, icse.  354. 

     

    robert d richards, faebian bastiman, abdul r mohmad, christopher j hunter, john p r david, nicholas j ekins-daukes.  (2013).  gaasbi mqws for multi-junction photovoltaics.  - 39th ieee photovoltaic specialist conference. 

     

    abdul rahman mohmad.  (2018).  teknologi semikonduktor dan nanoelektronik : perkembangan dan kegunaan.  - 17. 

     

    abdul rahman mohmad.  (2018).  teknologi semikonduktor dan nanoelektronik : perkembangan dan kegunaan.  - 17. 

     

    abdul rahman mohmad.  (2020).  bernama radio: the skillz.  - penyelidik bertaraf global. 

     

    abdul rahman mohmad, muhammad hilmi johari, jieun yang, yan wang, manish chhowalla.  (2019).  the chemical vapor deposition of transition metal dichalcogenides for hydrogen evolution reaction.  - the 4th malaysia-japan joint symposium on nanoelectronics 2019.  2. 

     

    norhayati binti abu bakar;akrajas bin ali umar;abdul rahman bin mohmad;norhayati binti abu bakar.  (2019).  building surface enhanced raman spectroscopy (sers) based biosensors.  -

     

    muhammad hilmi johari, mohd ambri mohamed & abdul rahman mohmad.  (2019).  effects of growth temperature on mos2 grown by chemical vapor deposition.  -

     

    muhammad hilmi johari, mohd ambri mohamed, abdul rahman mohmad.  (2019).  effects of mo vapor concentration on the morphology of vertically standing mos2 nanoflakes.  - nanomite annual symposium & nanotechnology malaysia annual symposium 2019 (nanosym 2019).  1-2.